Photo Reflective Sensor
This is a reflective sensor combines a GaA1As infrared light emitting diode with a high sensitive Darlington phototransistor in a mini package.
Features
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Compact
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High performance
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High output
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Easy to mount on PCB
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Widely applicable
Application Ideas
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Timing sensors
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Edge sensors
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Micro floppy disc drivers
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Level sensors of liquid
Specification
Maximum Ratings (Ta=25℃)
| Item | Symbol | Rating | Unit | |
| Input | Power Dissipation | PD | 100 | mW |
| Reverse Voltage | VR | 5 | V | |
| Forward Current | IF | 50 | mA | |
| Pulse Forward current *1 | IFP | 1 | A | |
| Output | Collector Power Dissipation | Pc | 100 | mW |
| Collector Current | Ic | 20 | mA | |
| C-E Voltage | VCEO | 30 | V | |
| E-C Voltage | VECO | 5 | V | |
| Operating Temperature | Topr | -10~+65 | ℃ | |
| Storage Temperature | Tstg | -25~+85 | ℃ | |
| Soldering Temperature*2 | Tsol | 260 | ℃ | |
Electro-optical Characteristics (Ta=25℃)
| Item | Symbol | Conditions | Min | Typ | Max | Unit | |
| Input | Forward Voltage | VF | IF=20mA | 1.2 | 1.6 | V | |
| Reverse Current | IR | VR=5V | 10 | µA | |||
| Capacitance | Ct | V=0V, f=1kHZ | 25 | pF | |||
| Peak Wavelength | λP | 940 | nm | ||||
| Output | Collector Dark Current | ICEO | VCE=20V | 0.1 | µA | ||
| Light Current | IL | VCE=5V,IF=20mA | 50 | µA | |||
| Leakage Current | ICEOD | VCE=5V,IF=10mA | 1 | µA | |||
| Switching Speeds | Rise Time | tr | Vcc=5V, Ic=1mA, RL=1kΩ | 15 | µsec | ||
| Fall Time | tf | 15 | µsec | ||||
Mechanic Dimensions
Tech Support & Product Discussion
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