Photo Reflective Sensor
This is a reflective sensor combines a GaA1As infrared light emitting diode with a high sensitive Darlington phototransistor in a mini package.
Features
Compact
High performance
High output
Easy to mount on PCB
Widely applicable
Application Ideas
Timing sensors
Edge sensors
Micro floppy disc drivers
Level sensors of liquid
Specification
Maximum Ratings (Ta=25℃)
| Item | Symbol | Rating | Unit | |
| Input | Power Dissipation | PD | 100 | mW |
| Reverse Voltage | VR | 5 | V | |
| Forward Current | IF | 50 | mA | |
| Pulse Forward current *1 | IFP | 1 | A | |
| Output | Collector Power Dissipation | Pc | 100 | mW |
| Collector Current | Ic | 20 | mA | |
| C-E Voltage | VCEO | 30 | V | |
| E-C Voltage | VECO | 5 | V | |
| Operating Temperature | Topr | -10~+65 | ℃ | |
| Storage Temperature | Tstg | -25~+85 | ℃ | |
| Soldering Temperature*2 | Tsol | 260 | ℃ | |
Electro-optical Characteristics (Ta=25℃)
| Item | Symbol | Conditions | Min | Typ | Max | Unit | |
| Input | Forward Voltage | VF | IF=20mA | 1.2 | 1.6 | V | |
| Reverse Current | IR | VR=5V | 10 | µA | |||
| Capacitance | Ct | V=0V, f=1kHZ | 25 | pF | |||
| Peak Wavelength | λP | 940 | nm | ||||
| Output | Collector Dark Current | ICEO | VCE=20V | 0.1 | µA | ||
| Light Current | IL | VCE=5V,IF=20mA | 50 | µA | |||
| Leakage Current | ICEOD | VCE=5V,IF=10mA | 1 | µA | |||
| Switching Speeds | Rise Time | tr | Vcc=5V, Ic=1mA, RL=1kΩ | 15 | µsec | ||
| Fall Time | tf | 15 | µsec | ||||
Mechanic Dimensions
Tech Support & Product Discussion
Thank you for choosing our products! We are here to provide you with different support to ensure that your experience with our products is as smooth as possible. We offer several communication channels to cater to different preferences and needs.