Photo interrupter (OS25B10)

The OS25B10 is a high performance standard type photo interrupter, which combines high output GaAlAs infrared light emitting diode and high sensitive phototransistor.

Features

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• 10mm space for interruption

• Easy to mount on PCB

• High-speed response

• Widely applicable

Application Ideas

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• Tape-end sensors

• Timing sensors

• Edge sensors

• copiers

Specification

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Maximum Ratings (Ta=25℃)

Item		Symbol	Rating	Unit
Input	Power Dissipation	PD	80	mW
	Reverse Voltage	VR	5	V
	Forward Current	IF	50	mA
	Pulse Forward current * 1	IFP	1	A
Output	Collector Power Dissipation	Pc	100	mW
	Collector Current	Ic	20	mA
	C-E Voltage	VCEO	30	V
	E-C Voltage	VECO	5	V
Operating Temperature		Topr	-25~+65	℃
Storage Temperature		Tstg	-25~+85	℃
Soldering Temperature *2		Tsol	240	℃

Electro-optical Characteristics (Ta=25℃)

Item		Symbol	Conditions	Min	Typ	Max	Unit
Input	Forward Voltage	VF	IF=20mA		1.2	1.6	V
	Reverse Current	IR	VR=5V			10	µA
	Capacitance	Ct	f=1MHZ		25		pF
	Peak Wavelength	λP			940		nm
Output	Collector Dark Current	ICEO	VCE=10V		1	100	nA
	Light Current	IL	VCE=5V,IF=20mA	1	2.5		mA
	C-E Saturation Voltage	VCE(sat)	IF=20mA,Ic=0.5mA		0.2	0.4	V
Switching Speeds	Rise Time	tr	Vcc=10V, Ic=5mA, RL=100Ω		5		µsec
	Fall Time	tf			5		µsec

Mechanic Dimensions

Resources

The resources need to be downloaded, like Eagle file, Demo code, project or other datasheet.

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